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| Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.00.2 s Features q q q 0.70.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 5 30 300 150 -55 ~ +150 Unit V V V mA mW C C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Common emitter reverse transfer capacitance Reverse transfer impedance Transition frequency (Ta=25C) Symbol VCBO VCEO VEBO hFE* Cre Zrb fT Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 1mA VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -1mA, f = 2MHz VCB = 10V, IE = -1mA, f = 200MHz 150 250 min 30 20 5 70 250 1.6 60 pF MHz typ max Unit V V V *h FE Rank classification B 70 ~ 160 C 110 ~ 250 hFE Rank 2.00.2 marking +0.2 0.45-0.1 s Absolute Maximum Ratings (Ta=25C) 15.60.5 Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. 3.00.2 1 Transistor PC -- Ta 500 24 Ta=25C 20 50 2SC3313 IC -- VCE 60 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 16 IB=100A 12 80A 8 60A 40A 4 20A Collector current IC (mA) 400 40 300 25C Ta=75C -25C 30 200 20 100 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Ta=75C IC/IB=10 300 hFE -- IC 600 VCE=10V fT -- I E Ta=25C Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 -25C 100 Transition frequency fT (MHz) 500 400 VCB=10V 6V 200 300 50 100 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 5 120 Zrb -- IE Reverse transfer impedance Zrb () IE=0 f=1MHz Ta=25C f=2MHz Ta=25C 100 Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 f=10.7MHz Ta=25C 2.0 IC=1mA, 3mA 1.6 Collector output capacitance Cob (pF) 4 80 3 60 1.2 2 40 VCB=6V 20 10V 0.8 1 0.4 0 1 3 10 30 100 0 0.1 0.3 1 3 10 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 |
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